The RSD100N10TL from Rohm Semiconductor is an N-channel MOSFET with a drain-source breakdown voltage of 100 volts and a continuous drain current of 10 amperes @ 25 degrees Celsius.

• Maximum power dissipation: 20 watts
• Gate-source threshold voltage: 2.5 volts @ 1 milliampere
• Maximum Rds On: 133 milliohms @ 5 amperes and 10 volts
• Maximum gate charge: 18 nanocoulombs @ 10 volts
• Maximum input capacitance: 700 picofarads @ 25 volts
• Temperature Range: up to 150 degrees Celsius
• Supply and demand status: balanced