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Same model may have multiple batches, images only for reference.
RTL020P02TR Real Image
Same model may have multiple batches, images only for reference.

RTL020P02TR

Part No RTL020P02TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A TUMT6
Datasheet
RTL020P02TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 4.9nC @ 4.5V
Max Input Capacitance 430pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 135 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT6
Dimension 6-SMD, Flat Leads
Win Source Part Number 098407-RTL020P02TR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RTL020P02TR CAD Model

Description

The RTL020P02TR MOSFET is a high-quality product from Rohm Semiconductor.

  • Package: Surface Mount
  • Package Type: Reel-TR
  • Channel Type: P-Channel
  • Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Gate-Source Voltage: ±12V
  • Rds On @ Id, Vgs: 135 mOhm @ 2A, 4.5V

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435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
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Availability: 19,000 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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