The RTQ040P02DKR from Rohm Semiconductor is a P-channel MOSFET transistor with a maximum continuous drain current @ 25°C of 4A (Ta).

• Maximum Power Dissipation: 1.25W (Ta)
• Drain-Source Breakdown Voltage: 20V
• Gate-Source Threshold Voltage: 2V @ 1mA
• Maximum Gate- Source Voltage: ±12V
• Maximum Rds On @ Id, Vgs: 50 mOhm @ 4A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Temperature Range: 150°C (TJ)
• Design Purpose: designed for applications where a P-channel MOSFET transistor is required.
• Packaging: Digi-Reel packaging
• Popularity: medium