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RUE002N02TL

Part No RUE002N02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V .2A EMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 2.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 25pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 200mA, 2.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3
Dimension SC-75, SOT-416
Win Source Part Number 122010-RUE002N02TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RUE002N02TL CAD Model

Description

The Rohm Semiconductor RUE002N02TL is a N-Channel MOSFET with a maximum power dissipation of 150mW (Ta). It is a discrete semiconductor product that is not for new designs.

  • Drive Voltage: 1.2V and 2.5V
  • Drain-Source Breakdown Voltage: 20V
  • Mounting: Surface-mount device (SMD)
  • Package: Packaged in a reel
  • Quality: High-quality electronic component that is widely used in various electronic devices
  • Features: Known for its durability and long-lasting performance
  • Recommendation: Highly recommended for those who are looking for a reliable and efficient electronic component.

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.2911 $50.9425
420+ $0.2389 $100.3380
650+ $0.2314 $150.4100
895+ $0.2239 $200.3905
1,155+ $0.2165 $250.0575
1,550+ $0.1941 $300.8550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,968 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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