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Same model may have multiple batches, images only for reference.
RZF030P01TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RZF030P01TL

Part No RZF030P01TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3A TUMT3
Datasheet
RZF030P01TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1860pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 39 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT3
Dimension 3-SMD, Flat Leads
Win Source Part Number 027674-RZF030P01TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RZF030P01TL CAD Model

Description

The RZF030P01TL is a P-Channel MOSFET that has a maximum power dissipation of 800mW (Ta) from Rohm Semiconductor.

  • Drive Voltage: 1.5V, 4.5V
  • Continuous Drain Current @ 25°C: 3A (Ta)
  • Maximum Gate-Source Voltage: ±10V
  • Maximum Rds On @ Id,Vgs: 39 mOhm @ 3A, 4.5V
  • Win Source Part Number: 027674-RZF030P01TL

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Quantity Unit Price Ext. Price
520+ $0.0962 $50.0240
1,115+ $0.0900 $100.3500
1,730+ $0.0869 $150.3370
2,480+ $0.0807 $200.1360
3,225+ $0.0776 $250.2600
4,030+ $0.0745 $300.2350
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Availability: 23,000 pieces
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