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SCT3022KLHRC11

Name: SCT3022KLHRC11
Brand: Rohm Semiconductor
SKU: 1278189
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	SCT3022KLHRC11
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SCT3022KLHRC11 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Rohm Semiconductor
Series	Automotive, AEC-Q101
Package	Tube
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	28.6mOhm @ 36A, 18V
Vgs(th) (Max) @ Id	5.6V @ 18.2mA
Gate Charge (Qg) (Max) @ Vgs	178 nC @ 18 V
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	2879 pF @ 800 V
Power Dissipation (Max)	427W
Temperature Range - Operating	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3
Base Product Number	SCT3022
Standard Package	30
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1278189-SCT3022KLHRC11
Ultra Librarian 3D Model	Ultra Librarian SCT3022KLHRC11 CAD Model

Description

The SCT3022KLHRC11 from Rohm Semiconductor is a silicon carbide N-channel MOSFET transistor.

Drain to Source Voltage (Vdss): 1200V
Continuous Drain Current (Id): 95A @ 25°C
Maximum On-Resistance (Rds On): 28.6mOhm @ 36A and 18V
Gate Charge (Qg): 178nC @ 18V
Input Capacitance (Ciss): 2879pF @ 800V
Temperature Range: 175°C (TJ)
Suitable for: applications such as transistors, FETs, MOSFETs, and single

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