The SCT3080KLGC11 is a SiCFET (Silicon Carbide) N-Channel FET transistor designed for use in Discrete Semiconductor Products such as Transistors - FETs, MOSFETs - Single.

• Drain to Source Voltage (Vdss): 1200 V
• Continuous Drain Current (Id): 31A @ 25°C
• Maximum Rds On: 104mOhm @ 10A and 18V
• Gate Charge (Qg): 60 nC @ 18 V
• Input Capacitance (Ciss): 785 pF @ 800 V
• Maximum Vgs: +22V and -4V
• Temperature Range: 175°C (TJ)
• Package Type: Through Hole
• Package/Case: TO-247-3
• Manufacturer: Rohm Semiconductor
• Applications: Power supplies, motor drives, and inverters