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SCT3105KLHRC11

Part No SCT3105KLHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 137mOhm @ 7.6A, 18V
Vgs(th) (Max) @ Id 5.6V @ 3.81mA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 574 pF @ 800 V
Power Dissipation (Max) 134W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3105
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278192-SCT3105KLHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3105KLHRC11 CAD Model

Description

The SCT3105KLHRC11 is a SiCFET (Silicon Carbide) N-Channel FET designed for use in automotive applications.

  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id): 24A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
  • Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
  • Power Dissipation (Max): 134W
  • Temperature Range: 175°C (TJ)
  • Mounting: Through hole
  • Package: TO-247-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $17.4159 $69.6636
9+ $14.2900 $128.6100
13+ $13.8435 $179.9655
18+ $13.3968 $241.1424
23+ $12.9503 $297.8569
30+ $11.6107 $348.3210
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
In Stock: 900 pieces Factory Stock: 900 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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