The 1324589-SCT3105KRC14 is a discrete semiconductor product suitable for use in transistors, FETs, and MOSFETs from Rohm Semiconductor. This N-Channel SiCFET (Silicon Carbide) transistor has a maximum drain to source voltage of 1200V and a continuous drain current of 24A at 25°C.

• Rds On (Max) @ Id, Vgs: 137mOhm @ 7.6A, 18V
• Vgs(th) (Max) @ Id: 5.6V @ 3.81mA
• Power Dissipation: 134W
• Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 800 V
• Temperature Range: 175°C (TJ)
• Supply and Demand Status: currently in shortage