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Same model may have multiple batches, images only for reference.
SCT3160KW7TL Real Image
Same model may have multiple batches, images only for reference.

SCT3160KW7TL

Part No SCT3160KW7TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1200V 17A TO263-7 / N-Channel 1200 V 17A (Tc) 100W Surface Mount TO-263-7
Datasheet
SCT3160KW7TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V
Vgs(th) (Max) @ Id 5.6V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 398 pF @ 800 V
Power Dissipation (Max) 100W
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package TO-263-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number SCT3160
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 846-SCT3160KW7TLCT,846-SCT3160KW7TLTR,846-SCT3160KW7TLDKR
Standard Package 1,000
Win Source Part Number 1091919-SCT3160KW7TL
Ultra Librarian 3D Model Ultra Librarian SCT3160KW7TL CAD Model

Description

The SCT3160KW7TL is an N-channel SiCFET transistor manufactured by Rohm Semiconductor.

  • Channel Type: N-channel
  • Maximum Drain to Source Voltage: 1200V
  • Continuous Drain Current @ 25°C: 17A
  • Maximum Rds On @ 5A, 18V: 208mOhm
  • Gate Charge @ 18V: 42 nC
  • Input Capacitance @ 800V: 398pF
  • Maximum Operating Temperature: 175°C

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