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SCT4062KW7HRTL

Part No SCT4062KW7HRTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 1200V, 24A, 7-PIN SMD, TRENCH-ST / N-Channel 1200 V 24A (Tc) 93W Surface Mount TO-263-7L
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id 4.8V @ 6.45mA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 18 V
Vgs (Max) +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1498 pF @ 800 V
FET Feature -
Power Dissipation (Max) 93W
Temperature Range - Operating 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263-7L
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355198-SCT4062KW7HRTL
Ultra Librarian 3D Model Ultra Librarian SCT4062KW7HRTL CAD Model

Description

The SCT4062KW7HRTL is an N-Channel SiCFET (Silicon Carbide) MOSFET from Rohm Semiconductor.

  • Operating Temperature: Up to 175°C
  • Drain-to-Source Voltage (Vdss): 1200V
  • Continuous Drain Current (Id): 24A
  • On-Resistance: 81mOhm @ 12A, 18V
  • Gate Voltage: +21V, -4V
  • Gate Charge: 64nC @ 18V
  • Application: Automotive

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