The Rohm Semiconductor 046852-SH8K12TB1 is a high-quality N-Channel dual FET with a drain-source breakdown voltage of 30V and a continuous drain current of 5A.

• Maximum Power Dissipation: 2W.
• Gate-Source Threshold Voltage: 2.5V @ a current of 1mA.
• Maximum Gate Charge: 4nC @ 5V.
• Maximum Input Capacitance: 250pF @ 10V.
• Maximum Rds on: 42 mOhm @ 5A and 10V.
• Applications: Suitable for use in a wide range of applications, including power supplies, motor control, and audio amplifiers.
• Mounting Style: The FET is supplied in an SMD mounting style.
• Package: 8-SOP package.
• Manufacturer: Rohm Semiconductor is a renowned manufacturer of high-quality electronic components.