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SH8M11

Name: SH8M11
Brand: Rohm Semiconductor
SKU: 320640
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	SH8M11
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N/P-CH 30V 3.5A 8SOP
Datasheet	SH8M11 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Rohm Semiconductor
Packaging	Reel - TR
Status	Not For New Designs
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	3.5A
Maximum Rds On at Id,Vgs	98 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage	2.5V @ 1mA
Max Gate Charge	1.9nC @ 5V
Max Input Capacitance	85pF @ 10V
Maximum Power Dissipation	2W
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	8-SOP
Win Source Part Number	211602-SH8M11
Popularity	Medium
Supply and Demand Status	Balance
Application Field	Used in Industrial, Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model	Ultra Librarian SH8M11 CAD Model

Alternative Products

Description

The Rohm Semiconductor SH8M11 is a logic level gate N and P-channel FET that comes in an 8-SOP package.

Maximum Power Dissipation: 2W.
Drain-Source Breakdown Voltage: 30V.
Continuous Drain Current: 3.5A @ 25°C.
Gate-Source Threshold Voltage: 2.5V @ 1mA.
Maximum Gate Charge: 1.9nC @ 5V.
Maximum Input Capacitance: 85pF @ 10V.
Maximum Rds On: 98mOhm @ 3.5A and 10V.
Applications: ideal for use in industrial, power management, and computer applications.

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SH8M11

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