The Rohm Semiconductor 046854-SH8M2TB1 is an N and P-Channel FET designed for use in discrete semiconductor products.

• Maximum Power Dissipation: 2W.
• Drain-Source Breakdown Voltage: 30V.
• Continuous Drain Current @ 25°C: 3.5A.
• Gate-Source Threshold Voltage: 2.5V @ 1mA.
• Package Size: 8-SOP.
• Maximum Rds On: 83 mOhm @ 3.5A, 10V.
• Second Component: The RQ6E055BNTCR is an N-Channel MOSFET designed for use in discrete semiconductor products.
• Power Dissipation: 1.25W (Ta).
• Drain-Source Breakdown Voltage: 30V.
• Continuous Drain Current @ 25°C: 5.5A (Ta).
• Gate-Source Threshold Voltage: 2.5V @ 1mA.
• Package Size: TSMT6 (SC-95), SOT-23-6 Thin, TSOT-23-6.
• Maximum Rds On: 25 mOhm @ 5.5A, 10V.