The SP8K1FU6TB is a dual 2 N-channel Logic Level Gate FET designed and manufactured by Rohm Semiconductor.

• FET Channel Type: dual 2 N-channel
• Gate Feature: Logic Level Gate
• Package: 8-SOP
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 5A @ 25°C
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Power Dissipation (Max): 2W
• Rds On (Max): 51 mOhm @ 5A and 10V
• Gate Charge (Max): 5.5nC @ 5V
• Input Capacitance (Max): 230pF @ 10V
• Design Status: not recommended for new designs
• Operating Temperature Range: 150°C (TJ)
• Alternative Parts: SI9936BDY-T1-E3, SP8K1FRATB, SP8K1FU6TB, and SP8K1