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Same model may have multiple batches, images only for reference.
SP8K22FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8K22FU6TB

Part No SP8K22FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 45V 4.5A 8SOIC
Datasheet
SP8K22FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 4.5A
Maximum Rds On at Id,Vgs 46 mOhm @ 4.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 9.6nC @ 5V
Max Input Capacitance 550pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 047199-SP8K22FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8K22FU6TB CAD Model

Description

The SP8K22FU6TB is a dual N-channel FET from Rohm Semiconductor.

  • Manufacturer: Rohm Semiconductor
  • Win Source Part Number: 047199
  • Packaging: reel - TR
  • Mounting Type: SMD (SMT)
  • FET Feature: logic level gate
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 45V
  • Continuous Drain Current @ 25°C: 4.5A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Gate Charge (Max): 9.6nC @ 5V
  • Input Capacitance (Max): 550pF @ 10V
  • Rds On (Max) @ Id,Vgs: 46 mOhm @ 4.5A, 10V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6468 $58.2120
220+ $0.5313 $116.8860
340+ $0.5140 $174.7600
465+ $0.4978 $231.4770
600+ $0.4816 $288.9600
805+ $0.4320 $347.7600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,200 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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