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Same model may have multiple batches, images only for reference.
SP8K52FRATB Real Image
Same model may have multiple batches, images only for reference.

SP8K52FRATB

Part No SP8K52FRATB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SP8K52FRATB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tape & Reel
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 170mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Power - Max 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOP
Base Product Number SP8K52
Other Names SP8K52FRATBDKR,SP8K52FRATBTR,SP8K52FRATBCT
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278552-SP8K52FRATB
Ultra Librarian 3D Model Ultra Librarian SP8K52FRATB CAD Model

Description

The SP8K52FRATB from Rohm Semiconductor is a dual N-channel FET transistor array suitable for use in automotive applications.

  • Drain to Source Voltage (Vdss): 100V
  • Maximum Continuous Drain Current (Id): 3A (Ta)
  • Maximum Rds On: 170mOhm @ 3A, 10V
  • Maximum Vgs(th): 2.5V @ 1mA
  • Gate Charge (Qg): 8.5nC @ 5V
  • Input Capacitance (Ciss): 610pF @ 25V
  • Power Dissipation (Maximum): 2W
  • Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.7364 $58.9120
195+ $0.6043 $117.8385
300+ $0.5855 $175.6500
410+ $0.5666 $232.3060
530+ $0.5477 $290.2810
710+ $0.4910 $348.6100
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