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SP8M51TB1 Rohm Semiconductor SP8M51TB1 Real Image
Same model may have multiple batches, images only for reference.
SP8M51TB1 Rohm Semiconductor SP8M51TB1 Real Image
SP8M51TB1 Rohm Semiconductor SP8M51TB1 Real Image
Same model may have multiple batches, images only for reference.

SP8M51TB1

Part No SP8M51TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 100V 3A/2.5A SOP8
Datasheet
SP8M51TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3A, 2.5A
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 030740-SP8M51TB1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8M51TB1 CAD Model

Description

The Rohm Semiconductor SP8M51TB1 is a standard N and P-channel FET designed for various electronic applications.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 100V

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Quantity Unit Price Ext. Price
80+ $0.7404 $59.2320
195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
410+ $0.5694 $233.4540
525+ $0.5509 $289.2225
705+ $0.4932 $347.7060
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Availability: 23,945 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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