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SP8M6FU6TB

Name: SP8M6FU6TB
Brand: Rohm Semiconductor
SKU: 1278568
Availability: InStock
Rating: 4.93 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SP8M6FU6TB
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Datasheet	SP8M6FU6TB Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr	Rohm Semiconductor
Product Status	Obsolete
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	5A, 3.5A
Rds On (Max) @ Id, Vgs	51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 10V
Power - Max	2W
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	SP8M6
Standard Package	2,500
MSL Level	1 (Unlimited)
ECCN	EAR99
Win Source Part Number	1278568-SP8M6FU6TB
Ultra Librarian 3D Model	Ultra Librarian SP8M6FU6TB CAD Model

Alternative Products

Description

The SP8M6FU6TB is a discrete semiconductor product categorized under transistors - FETs, MOSFETs - arrays.

FET Type: Logic level gate N and P-channel
Maximum Drain to Source Voltage (Vdss): 30V
Continuous Drain Current (Id) @ 25°C: 5A and 3.5A
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power-Max: 2W
Package/Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Temperature Range: 150°C (TJ)
Status: Obsolete

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