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Same model may have multiple batches, images only for reference.
UMB1NTN Real Image
Same model may have multiple batches, images only for reference.

UMB1NTN

Part No UMB1NTN
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS PREBIAS DUAL PNP UMT6
Datasheet
UMB1NTN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 PNP - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 22k
Typical Gain (hFE) (Min) 56 @ 5mA, 5V
Max Vce (sat) 300mV @ 500μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 150mW
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 213722-UMB1NTN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UMB1NTN CAD Model

Description

This Rohm Semiconductor transistor with part number 213722-UMB1NTN is a PNP pre-biased dual transistor with a transition frequency of - and a maximum current collector of 100mA.

  • Recommendation: not for new designs
  • Package: UMT6 case/package
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 150mW

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