The K4H561638D-TCB3 is a DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. This memory component is designed for use in a wide range of applications requiring high bandwidth and low latency data access.

Applications

• Desktop and laptop computers
• Graphics cards
• Gaming consoles
• Networking devices
• Embedded systems

Features

• DDR SDRAM technology for high-speed data transfer
• 512Mb density (512 Megabits)
• Organized as 16M x 16 bits x 2 banks
• Double data rate architecture: two data transfers per clock cycle
• Operating frequency up to 200 MHz
• Low power consumption

Benefits

• Increased system performance due to high memory bandwidth
• Improved responsiveness in applications requiring fast data access
• Reduced power consumption compared to older memory technologies
• Enhanced multitasking capabilities
• Greater overall system efficiency

Additional Details

The K4H561638D-TCB3 operates at a specific voltage, typically 2.5V. It conforms to the JEDEC (Joint Electron Device Engineering Council) standards for DDR SDRAM, ensuring compatibility with a wide range of chipsets and memory controllers. The chip is packaged in a standard FBGA (Fine-pitch Ball Grid Array) package for surface mounting on printed circuit boards. The timing parameters, such as CAS latency (CL), are critical for optimal performance and must be configured correctly in the system BIOS or memory controller settings. Detailed specifications, including timing diagrams, power consumption curves, and thermal characteristics, are available in the Samsung datasheet for this part number. The 'TCB3' suffix likely represents specific speed grade or packaging variations.