The K9F1208U0C-PIB0 is a 128M x 8 bit NAND Flash Memory device manufactured by Samsung. It's designed for mass storage applications where high density, low cost, and non-volatility are critical. This NAND Flash memory utilizes advanced memory cell technology to achieve high storage capacity in a small form factor.

Applications

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Digital Cameras and Camcorders

Features

• High Density: 128M x 8 bit (1Gbit)
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (512 + 16) Byte
• Block Size: (32K + 1K) Byte
• Asynchronous Interface
• Data Retention: 10 years
• Endurance: 100,000 Program/Erase Cycles (typical)
• Operating Temperature: -40°C to +85°C

Benefits

• High Storage Capacity: Provides a large storage capacity for data and applications.
• Non-Volatile Memory: Data is retained even when power is removed.
• Low Cost: NAND Flash technology offers a cost-effective storage solution.
• Small Form Factor: Allows for integration into compact devices.
• High Reliability: Offers high endurance and long data retention.

Technical Specifications

The K9F1208U0C-PIB0 operates with a supply voltage of 2.7V to 3.6V. The page size is (512 + 16) bytes, and the block size is (32K + 1K) bytes. It features an asynchronous interface. The data retention is 10 years, and the typical endurance is 100,000 program/erase cycles. The operating temperature range is -40°C to +85°C. Refer to the product datasheet for detailed timing diagrams, pinout information, and electrical characteristics.