The K9F5608UOC-YIBO is a NAND Flash memory chip manufactured by Samsung. This component is used for non-volatile data storage in various applications, providing a reliable and efficient solution for retaining data even when power is removed.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD, microSD)
• Embedded Systems
• Digital Cameras
• Mobile Devices

Features:

• Capacity: 2Gbit (256MB)
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (512 + 16) Bytes
• Block Size: (16K + 512) Bytes
• Data Retention: 10 Years
• Endurance: 100,000 Program/Erase Cycles
• Operating Temperature: -25°C to +85°C
• RoHS Compliant

Benefits:

• High-density storage in a compact package
• Fast read and write speeds for efficient data transfer
• Low power consumption, making it suitable for portable devices
• High endurance ensures longevity and reliability
• Data retention of 10 years ensures long-term data storage

Technical Specifications:

The K9F5608UOC-YIBO operates within a supply voltage range of 2.7V to 3.6V. It has a page size of 528 bytes (512 + 16) and a block size of 16896 bytes (16K + 512). It is designed to withstand 100,000 program/erase cycles, ensuring high endurance. The data retention is specified at 10 years. It is designed to operate in a temperature range of -25°C to +85°C.

The K9F5608UOC-YIBO NAND Flash memory chip offers a balance of performance, reliability, and power efficiency for various storage applications.