The K9LBG08U1M-PCB0 is a 32Gbit (4Gx8) NAND Flash Memory device manufactured by Samsung. It is designed for high-density data storage in various applications such as smartphones, tablets, and embedded systems. This NAND flash memory uses advanced technology to provide high performance, low power consumption, and reliable data storage.

Applications

• Smartphones
• Tablets
• Embedded Systems
• Digital Cameras
• Portable Media Players

Features

• High Density: 32Gbit (4Gx8)
• Supply Voltage: 2.7V ~ 3.6V
• Page Size: (4K + 224) Bytes
• Block Size: (1024K + 56K) Bytes
• Asynchronous Interface
• Data Retention: 10 years
• Endurance: 3,000 Program/Erase Cycles (minimum)
• Operating Temperature: -25°C to +85°C

Benefits

• High Storage Capacity: Offers significant storage space for applications, files, and multimedia content.
• Non-Volatile Memory: Retains data even when power is off.
• Low Power Consumption: Enhances battery life in portable devices.
• Reliable Performance: Provides robust data storage with long data retention and good endurance.
• Compact Size: Allows for integration into space-constrained devices.

Technical Specifications

The K9LBG08U1M-PCB0 operates with a supply voltage between 2.7V and 3.6V. The page size is (4K + 224) bytes, and the block size is (1024K + 56K) bytes. It uses an asynchronous interface for data transfer. The data retention is 10 years, and the minimum endurance is 3,000 program/erase cycles. The operating temperature range is -25°C to +85°C. For detailed timing diagrams, pinout information, and electrical characteristics, please refer to the product datasheet.