The 2SD1621 is a silicon NPN epitaxial planar transistor manufactured by SANYO Semiconductor (now ON Semiconductor after the acquisition). It's designed for use in high-frequency power amplifier applications, switching applications, and driver stages. This transistor is characterized by its high current capacity and relatively high transition frequency.

Applications

• High-Frequency Power Amplifiers
• Switching Regulators
• DC-DC Converters
• Motor Driver Circuits
• General-Purpose Amplification

Features

• High Collector Current (IC): Enables high power output.
• High Transition Frequency (fT): Allows for use in high-frequency circuits.
• Low Saturation Voltage: Minimizes power dissipation and improves efficiency.
• Excellent Linearity: Provides accurate amplification in amplifier circuits.
• Pb-Free Lead Plating

Benefits

• Efficient Power Amplification: High current capability and low saturation voltage contribute to efficient power amplification.
• Versatile Application: Suitable for a wide range of applications, including amplification and switching.
• Compact Design: Available in a compact package for space-constrained applications.
• Improved System Performance: High transition frequency allows for use in high-frequency circuits.
• Environmentally Friendly: Pb-free lead plating complies with environmental regulations.

Technical Specifications

• Polarity: NPN
• Collector-Emitter Voltage (VCEO): 50V
• Collector Current (IC): 3A
• Collector Power Dissipation (PC): 10W (Note: this depends on the heat sink and ambient temperature)
• Transition Frequency (fT): 100 MHz (Typical)
• Operating Temperature: -55°C to +150°C
• Package: TO-126