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2SD1997

Part No 2SD1997
Manufacturer SANYO Semiconductor (U.S.A) Corporation
Catalog Transistors (BJT) - Single
Description Compact Motor Driver Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer SANYO Semiconductor (U.S.A) Corporation
Win Source Part Number 1126402-2SD1997
Manufacturer Homepage www.ssdc-jp.com/eng/
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SD1997 CAD Model

Description

The 2SD1997 is a silicon NPN epitaxial planar transistor manufactured by SANYO Semiconductor. It's designed for use in various high-frequency power amplifier applications. It offers high collector power dissipation and good linearity, making it suitable for amplifier circuits in communication equipment and other high-performance devices.

Applications:

  • High-Frequency Amplifiers: Used in RF and IF amplifier stages in communication systems.
  • Oscillator Circuits: Implemented in oscillator circuits for signal generation.
  • Driver Stages: Employed as a driver transistor in power amplifier systems.
  • Switching Regulators: Can be used in switching regulator circuits for voltage control.
  • Line Drivers: Used to drive transmission lines in various applications.

Features:

  • High Collector Power Dissipation: Enables usage in high power amplifier circuits.
  • High Transition Frequency: Suitable for high-frequency applications.
  • Low Saturation Voltage: Minimizes power loss in switching applications.
  • Excellent Linearity: Ensures low distortion amplification.
  • TO-3P Package: Provides good thermal dissipation.
  • High Collector Current: Capable of handling significant current.

Benefits:

  • Improved Amplifier Performance: High transition frequency and excellent linearity provide better amplifier performance.
  • Increased Power Handling: High collector power dissipation enables higher power output.
  • Reduced Power Loss: Low saturation voltage minimizes power loss in switching applications.
  • Enhanced Reliability: Robust construction ensures long-term reliability.
  • Simplified Thermal Management: TO-3P package facilitates effective heat dissipation.

Additional Details:

The 2SD1997 has a collector-emitter voltage (VCEO) of 80V, a collector current (IC) of 7A, and a collector power dissipation (PC) of 60W. The transition frequency (fT) is typically 100 MHz. The DC current gain (hFE) is typically between 50 and 200. The transistor is housed in a TO-3P package, which provides efficient heat dissipation. Detailed datasheets from SANYO Semiconductor provide comprehensive information on electrical characteristics, thermal resistance, and mounting recommendations. It's essential to consult the datasheet for proper biasing and thermal management to ensure optimal performance and reliability.

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