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Part No 2N60
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Description Low Power Fixed Attenuator 2.5GHz 60dB 2-Pin
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer STMicroelectronics
Win Source Part Number 153100-2N60
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name 2N
Introduction Date April 23, 2015
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian 2N60 CAD Model

Description

STMicroelectronics 2N60 Power MOSFET

The STMicroelectronics 2N60 is a high-performance Power MOSFET designed to cater to a wide range of applications that require efficient power conversion and switching. This device is a member of the field-effect transistor family, known for its high-speed switching capabilities, low on-state resistance, and minimal gate drive power. The 2N60 is particularly suitable for use in power supplies, converters, motor controllers, and various other power management circuits.

Key Features

  • High Voltage Capability: The 2N60 can handle high voltages, making it suitable for applications that operate at elevated voltages.
  • Low On-Resistance: Its low on-state resistance ensures minimal voltage drop across the device when conducting, leading to higher efficiency and less heat generation.
  • Fast Switching Speed: The device's fast switching capability improves performance in circuits that require quick transitions between on and off states.
  • Low Gate Charge: With a low gate charge, the 2N60 can be driven with less power, which is beneficial in battery-powered or energy-sensitive applications.

Applications

The 2N60 MOSFET is versatile, finding use in a variety of electronic systems. Some common applications include:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor control circuits
  • Power management for consumer electronics
  • LED lighting systems

Technical Specifications

The technical specifications of the 2N60 include a drain-to-source voltage (V<sub>DS) of 600V, which allows it to comfortably handle high voltage applications. The continuous drain current (I<sub>D) is rated at 2A, providing ample current handling capability for a range of uses. The device also features a threshold voltage (V<sub>GS(th)) that ensures reliable operation at the intended gate voltages.

Quality and Reliability

STMicroelectronics is renowned for its commitment to quality and reliability. The 2N60 MOSFET is built with state-of-the-art manufacturing processes and rigorous testing to ensure it meets the high standards expected by industry professionals. Customers can trust this component to deliver consistent performance and durability in their electronic designs.

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