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BD438N

Part No BD438N
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer STMicroelectronics
Win Source Part Number 234300-BD438N
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BD438N CAD Model

Description

The BD438N is a high-performance PNP bipolar transistor from STMicroelectronics, designed to meet the needs of a wide range of electronic applications. This semiconductor device is crafted to handle moderate power amplification and switching applications, making it a versatile component for designers and engineers.

Key Features

  • PNP Bipolar Junction Transistor: The BD438N is a PNP transistor, which means it is optimized for use in circuits where current flows from the emitter to collector.
  • High Power Dissipation: With an ability to dissipate a considerable amount of power, the BD438N is suitable for applications that require higher power levels.
  • High Current Capability: This transistor can handle a substantial collector current, making it ideal for driving loads that require a significant amount of current.
  • Complementary NPN Type Available: For applications that require complementary transistor pairs, STMicroelectronics offers an NPN counterpart to the BD438N, allowing for a balanced push-pull configuration in amplifiers.

Applications

The BD438N transistor is designed for general-purpose amplification and switching. Its robustness and reliability make it suitable for a variety of applications, including:

  • Audio Amplifiers: Its high power handling capabilities make it a good choice for audio power amplification stages.
  • Power Regulators: The BD438N can be used in power regulator circuits to maintain a stable voltage or current.
  • Driver Stages in Hi-Fi Systems: It can drive speaker loads in high-fidelity audio systems.
  • Switching Applications: The transistor is also suitable for switching applications, such as controlling motors or other high-current loads.

Technical Specifications

The BD438N boasts a robust set of technical specifications that make it a reliable choice for various electronic designs:

  • Collector-Emitter Voltage (VCEO): Up to -32V
  • Collector Current (IC): Up to -4A
  • Power Dissipation (Pd): Up to 36W
  • DC Current Gain (hFE): 40 to 160
  • Operating Junction Temperature Range: -65°C to +150°C

With its combination of power, performance, and versatility, the BD438N from STMicroelectronics is a solid choice for any application requiring a reliable PNP bipolar transistor.

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