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PD55035-E

Part No PD55035-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 40V 500MHZ PWRSO-10
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr STMicroelectronics
Package Tube
Product Status Obsolete
Technology LDMOS
Frequency 500MHz
Gain 16.9dB
Voltage - Test 12.5 V
Current Rating (Amps) 7A
Current - Test 200 mA
Power - Output 35W
Voltage - Rated 40 V
Package / Case PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package PowerSO-10RF (Formed Lead)
Base Product Number PD55035
Standard Package 50 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 851768-PD55035-E
Ultra Librarian 3D Model Ultra Librarian PD55035-E CAD Model

Description

Introducing the STMicroelectronics PD55035-E RF Power Transistor

The PD55035-E is a high-performance RF power transistor from the renowned semiconductor manufacturer, STMicroelectronics. This device is designed to deliver exceptional power and efficiency for a wide range of applications that require reliable radio frequency amplification.

At the heart of the PD55035-E is ST's advanced LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, which ensures high gain, broad bandwidth, and excellent thermal stability. The transistor operates within the 7.5V to 12V range, making it versatile for use in various circuit configurations and power levels.

Key Features of the PD55035-E:

  • High Output Power: The transistor is capable of delivering a significant amount of RF power, which is crucial for applications that demand high output levels.
  • High Gain: With its excellent gain characteristics, the PD55035-E ensures that the input signal is amplified effectively without the need for additional stages.
  • Broadband Performance: This device is designed to work across a wide frequency range, providing flexibility for use in various RF applications.
  • Efficiency: The LDMOS technology used in the PD55035-E offers high efficiency, reducing power losses and improving overall system performance.
  • Thermal Resistance: The transistor is engineered with a low thermal resistance, ensuring that it remains stable and reliable even under high-temperature operating conditions.

Applications for the PD55035-E are diverse and include use in RF power amplifiers for mobile radio systems, broadband communications, industrial, scientific, and medical (ISM) applications, as well as in aerospace and defense systems. Its robustness and performance also make it suitable for use in harsh environments where reliability is paramount.

Whether you are designing a high-power RF amplifier for a commercial communication system or a specialized application requiring dependable RF power, the STMicroelectronics PD55035-E RF power transistor is an excellent choice that combines performance, efficiency, and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $81.6042 $81.6042
2+ $66.9565 $133.9130
3+ $64.8648 $194.5944
4+ $62.7719 $251.0876
5+ $60.6802 $303.4010
7+ $54.4028 $380.8196
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,676 pieces
Order Increment : 1 pcs
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