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PD57006STR-E

Part No PD57006STR-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description TRANS RF N-CH FET POWERSO-10RF / Trans RF MOSFET N-CH 65V 1A 3-Pin PowerSO-10RF (Straight lead) T/R
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel package
Transistor Type LDMOS
Frequency 945MHz
Gain 15dB
Voltage - Test 28V
Current Rating 1A
Current - Test 70mA
Power - Output 6W
Voltage Rating DC 65V
Package PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
Manufacturer Package PowerSO-10RF (Straight Lead)
Win Source Part Number 791611-PD57006STR-E
Popularity Medium
Supply and Demand Status Limited
Family Name PD57006S
Introduction Date May 06, 2006
ECCN EAR99
Country of Origin Morocco
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian PD57006STR-E CAD Model

Description

The PD57006STR-E is a state-of-the-art RF power transistor from STMicroelectronics, designed to deliver exceptional performance for a wide range of applications. This device is part of ST's LDMOS family, which is renowned for its high power efficiency and reliability. The PD57006STR-E is particularly suited for high-frequency operations and is commonly used in RF power amplifiers for telecommunications, industrial, and military applications.

Key Features

  • High Operating Frequency: The PD57006STR-E operates efficiently at high frequencies, making it ideal for RF applications that require fast switching and high-frequency signal amplification.
  • Thermal Performance: With an excellent thermal design, the transistor is capable of maintaining stability and performance even under high temperature conditions, ensuring long-term reliability.
  • Power Gain: It offers a high power gain, which allows for significant signal amplification without the need for multiple stages, simplifying the overall circuit design.
  • Efficiency: The LDMOS technology used in the PD57006STR-E provides high efficiency, which reduces power loss and improves the overall energy consumption of the system it is used in.
  • Durability: Manufactured with robust materials and built to withstand tough conditions, this transistor is durable and has a long operational lifespan.

Applications

The versatility of the PD57006STR-E allows it to be used in various applications, including but not limited to:

  • Base station transceivers for mobile communication
  • Broadband wireless systems
  • Industrial, scientific, and medical (ISM) applications
  • Military communications equipment
  • RF energy applications

Technical Specifications

The PD57006STR-E is designed to meet rigorous technical standards. Some of its key specifications include:

  • Supply Voltage: Typically 28V
  • Output Power: Capable of delivering high output power to drive demanding loads
  • Package: Housed in a robust and compact surface-mount package for easy integration into circuit designs

In conclusion, the PD57006STR-E from STMicroelectronics is an excellent choice for designers looking for a high-performance RF power transistor that combines efficiency, power gain, and thermal stability in a compact package.

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