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PD84008-E

Part No PD84008-E
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description FET RF 25V 870MHZ / RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer STMicroelectronics
Packaging Tube
Part Status Obsolete (End Of Life)
Transistor Type LDMOS
Frequency 870MHz
Gain 16.2dB
Voltage - Test 7.5V
Current Rating (Amps) 7A
Current - Test 250mA
Power - Output 2W
Voltage - Rated 25V
Manufacturer Package PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device Package PowerSO-10RF (Formed Lead)
Part Number Series PD84008
Manufacturer Pack Quantity 50
MSL Level 3 (168 Hours)
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802855-PD84008-E
Ultra Librarian 3D Model Ultra Librarian PD84008-E CAD Model

Description

Introducing the PD84008-E: A Robust LDMOS Transistor from STMicroelectronics

The PD84008-E is a state-of-the-art LDMOS transistor designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is specifically engineered to deliver high performance in RF power applications. With its exceptional power density and efficiency, the PD84008-E stands out as an ideal solution for a wide range of uses, including but not limited to, professional mobile radio, cellular base station applications, and RF industrial applications.

Key Features of the PD84008-E

  • High Operating Frequency: The PD84008-E is optimized for high-frequency operations, making it well-suited for broadband and narrowband RF applications that require reliable and consistent performance.
  • Enhanced Ruggedness: This LDMOS transistor is designed to withstand high voltage standing wave ratios (VSWR), making it extremely rugged and durable even under stressful conditions such as mismatched load operations.
  • Thermal Performance: The PD84008-E boasts excellent thermal stability and heat dissipation, ensuring that the device operates effectively even at elevated temperatures. This is crucial for maintaining performance and longevity in demanding environments.
  • Power Gain: With its high power gain, the PD84008-E allows for significant signal amplification, which is essential for achieving clear and powerful transmission in RF applications.
  • Efficiency: Energy efficiency is a hallmark of the PD84008-E, providing users with a cost-effective solution by reducing power losses and minimizing the need for extensive cooling systems.

Applications

The versatile nature of the PD84008-E makes it suitable for a variety of applications, including:

  • Professional Mobile Radio systems
  • RF Power Amplifiers for Cellular Base Stations
  • Industrial, Scientific, and Medical (ISM) Band Applications
  • High-power RF circuits and systems

STMicroelectronics' commitment to quality and innovation is embodied in the PD84008-E. This LDMOS transistor is not just a component; it's a reliable building block for high-performance RF systems that demand the best in power, efficiency, and ruggedness. Whether you're designing for commercial or industrial applications, the PD84008-E is engineered to exceed expectations and deliver unparalleled results.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.8889 $63.5556
8+ $13.0371 $104.2968
12+ $12.6297 $151.5564
17+ $12.2223 $207.7791
22+ $11.8149 $259.9278
29+ $10.5926 $307.1854
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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