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SCTH35N65G2V-7

Part No SCTH35N65G2V-7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 650V 45A H2PAK-7  /  N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Package Tape & Reel
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
Power Dissipation (Max) 208W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package H2PAK-7
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product Number SCTH35
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 497-SCTH35N65G2V-7DKR,497-SCTH35N65G2V-7TR,497-SCTH35N65G2V-7CT
Standard Package 1,000
Win Source Part Number 1091928-SCTH35N65G2V-7
Ultra Librarian 3D Model Ultra Librarian SCTH35N65G2V-7 CAD Model

Description

STMicroelectronics SCTH35N65G2V-7 Silicon Carbide Power MOSFET

The SCTH35N65G2V-7 is a state-of-the-art silicon carbide (SiC) power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable products. This MOSFET is part of ST's advanced SiC power devices that deliver high-efficiency, high-power density solutions for a variety of applications.

With a voltage rating of 650V and a low on-resistance of 45 mΩ, this MOSFET is designed to handle high power and high temperature with exceptional efficiency. The SCTH35N65G2V-7 is housed in a compact HiP247 package, which not only saves space but also ensures robust performance and excellent thermal management.

Key features of the SCTH35N65G2V-7 include:

  • Max R<sub>DS(on) of 45 mΩ at V<sub>GS = 20 V
  • 650V drain-source breakdown voltage (V<sub>BR(DSS))
  • Low gate charge and input capacitance for efficient switching
  • High-temperature capability, ensuring reliability under extreme conditions
  • HiP247 package for enhanced thermal performance and compactness

Applications that can benefit from the SCTH35N65G2V-7's high performance include electric vehicles (EVs), solar inverters, power supplies, and industrial motor drives. Its ability to operate at high frequencies enables more compact and lighter system designs, which is particularly beneficial in power-constrained applications.

STMicroelectronics has designed the SCTH35N65G2V-7 with a focus on minimizing conduction and switching losses. This translates to increased energy savings and reduced cooling requirements, which is critical for developing sustainable and eco-friendly technologies. By choosing the SCTH35N65G2V-7, designers can meet stringent efficiency standards while achieving superior system performance.

Whether you're developing cutting-edge power conversion systems or looking to enhance the efficiency of existing designs, the SCTH35N65G2V-7 from STMicroelectronics is a powerful solution that offers reliability, efficiency, and high-power density for your advanced applications.

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