The SCTWA90N65G2V is a state-of-the-art Silicon Carbide (SiC) Power MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This high-performance MOSFET is designed to meet the demands of energy-efficient power conversion in a variety of applications, including electric vehicles, solar inverters, and industrial systems.

Key Features

• High-Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, this MOSFET can handle high power levels, making it suitable for a wide range of high-voltage applications.
• Low On-Resistance: The SCTWA90N65G2V boasts a low on-resistance (R<sub>DS(on)) of 90 mΩ, which translates to reduced conduction losses and improved efficiency in power conversion circuits.
• Fast Switching Speed: Thanks to the inherent properties of SiC, this MOSFET achieves fast switching speeds, which further enhances the efficiency of power converters by minimizing switching losses.
• High-Temperature Operation: Silicon Carbide devices are known for their thermal stability, and this MOSFET is no exception. It can operate at higher temperatures than traditional silicon devices, enabling more compact and reliable system designs.
• Robust Body Diode: The SCTWA90N65G2V includes an integrated body diode with low reverse recovery charge, which is crucial for handling high-speed switching and reducing stress on the device.

Applications

The versatility of the SCTWA90N65G2V allows it to be used in various high-performance applications, including:

• Electric vehicle (EV) powertrains and charging stations
• Photovoltaic (solar) inverters
• Uninterruptible power supplies (UPS)
• Switched-mode power supplies (SMPS)
• High-efficiency DC-DC converters
• Energy storage systems

Advantages

By choosing the SCTWA90N65G2V for your power conversion needs, you benefit from the following advantages:

• Reduced system size and weight due to high-temperature operation capabilities
• Increased system efficiency resulting from low on-resistance and fast switching
• Enhanced system reliability through robust design and high thermal conductivity of SiC
• STMicroelectronics' commitment to quality and support, ensuring a reliable supply and technical assistance

With its cutting-edge Silicon Carbide technology, the SCTWA90N65G2V from STMicroelectronics represents a significant advancement in the field of power electronics, offering designers a superior solution for high-efficiency, high-reliability power systems.