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STB130NS04ZBT4

Part No STB130NS04ZBT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MESH OVERLAY™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 33 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) Clamped
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB130
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278014-STB130NS04ZBT4
Ultra Librarian 3D Model Ultra Librarian STB130NS04ZBT4 CAD Model

Description

The STB130NS04ZBT4 is a high-performance N-channel MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This power MOSFET is engineered to deliver exceptional efficiency and power density, making it an ideal choice for a wide range of applications, including switch-mode power supplies, DC-DC converters, motor control, and high-efficiency power management systems.

Key Features

  • Low On-Resistance: The STB130NS04ZBT4 boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • High Current Capability: With a continuous drain current (I<sub>D) rating of up to 120A, this MOSFET can handle high current applications with ease.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliable performance under stress conditions.
  • Low Gate Charge: The reduced gate charge (Q<sub>g) allows for faster switching speeds and reduced switching losses.
  • Enhanced Thermal Performance: The STB130NS04ZBT4 features an optimal design for efficient heat dissipation, contributing to its robust thermal performance and longevity.

Applications

The versatile characteristics of the STB130NS04ZBT4 make it suitable for a variety of high-power and high-efficiency applications, such as:

  • Power Supply Units (PSUs)
  • Automotive Applications
  • DC/AC Inverters
  • Battery Management Systems
  • Switched Mode Power Supplies (SMPS)
  • High-Performance Computing

Quality and Reliability

STMicroelectronics is committed to delivering products that meet the highest standards of quality and reliability. The STB130NS04ZBT4 is no exception, with its robust design and strict quality control processes ensuring that it performs to the expectations in the most demanding situations.

For detailed specifications, application notes, and additional resources, designers and engineers are encouraged to visit the official STMicroelectronics website or contact their support team for technical assistance.

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