The STB140NF55T4 is a state-of-the-art N-channel Power MOSFET produced by STMicroelectronics, a global leader in semiconductor solutions. This device is designed for high-efficiency power conversion applications and is part of the MDmesh™ IV series which boasts an excellent RDS(on) area ratio and reduced gate charge.

Key Features

• Low threshold voltage (V<sub>GS(th)): The device has a low gate threshold voltage, making it suitable for low voltage applications.
• High dv/dt capability: This feature ensures the MOSFET can handle high voltage changes without suffering from adverse effects, providing reliable performance under harsh conditions.
• 100% avalanche tested: The STB140NF55T4 is rigorously tested for avalanche conditions, ensuring its ruggedness and reliability in applications where the device may experience high energy pulses.
• Zener-protected: The gate-source of this MOSFET is protected with an integrated Zener diode, safeguarding it against electrostatic discharge and voltage spikes.

Applications

The STB140NF55T4 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• High-efficiency DC-DC converters
• Motor control circuits
• Automotive applications
• LED lighting solutions

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DSS) 55V Continuous Drain Current (I<sub>D) 120A Power Dissipation (P<sub>D) 300W RDS(on) 8.2 mΩ max Package TO-220AB

The STB140NF55T4 is a robust and efficient solution for designers looking to improve power management in their systems. With its advanced technology and reliable performance, this MOSFET from STMicroelectronics is an excellent choice for high-performance power applications.