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STB150N3LH6

Part No STB150N3LH6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series DeepGATE™, STripFET™ VI
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V
Power Dissipation (Max) 110W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB150N
Other Names 497-13263-6,-497-13263-2,-497-13263-1,-497-13263-6,497-13263-2,497-13263-1
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278138-STB150N3LH6
Ultra Librarian 3D Model Ultra Librarian STB150N3LH6 CAD Model

Description

STB150N3LH6 - N-Channel MOSFET from STMicroelectronics

The STB150N3LH6 is a robust and high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is an integral component for power management applications due to its exceptional efficiency and thermal performance. Designed with the latest technology, it is suitable for a wide range of applications, including switch-mode power supplies, motor control, and general-purpose switching applications.

Key Features

  • High Current Capability: With a continuous drain current of 120 A, the STB150N3LH6 can handle high current loads, making it ideal for power-intensive applications.
  • Low On-Resistance: The device features an ultra-low on-resistance of 3.3 mOhm, which minimizes conduction losses and improves overall efficiency.
  • High Switching Performance: Fast switching speeds are achieved thanks to the low gate charge and capacitance, which is essential for reducing switching losses and improving power efficiency.
  • Robust Thermal Management: The STB150N3LH6 has an excellent thermal performance with a maximum junction temperature of 175°C, ensuring reliability even under high temperature operating conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, providing additional reliability and peace of mind for applications that may experience unexpected voltage spikes.

Applications

The versatility of the STB150N3LH6 MOSFET allows it to be used in various applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Power management systems

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STB150N3LH6 is no exception, as it is designed and manufactured to meet the highest standards of quality and reliability. This MOSFET is a testament to STMicroelectronics' dedication to providing state-of-the-art semiconductor technologies that empower innovation across multiple industries.

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