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STB19NM65N

Part No STB19NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ II
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 7.75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 50 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB19N
Other Names -497-7001-6,1805-STB19NM65NCT,497-7001-6,1805-STB19NM65NTR,497-7001-2,1805-STB19NM65NDKR,-497-7001-2,497-7001-1,-497-7001-1
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278101-STB19NM65N
Ultra Librarian 3D Model Ultra Librarian STB19NM65N CAD Model

Description

STB19NM65N - N-channel 650 V, 0.19 Ω typ., 17 A MDmesh™ DM2 Power MOSFET in a D²PAK Package

The STB19NM65N is a high-performance N-channel Power MOSFET from the industry-leading manufacturer STMicroelectronics. This state-of-the-art component is part of the MDmesh™ DM2 series, which is renowned for its excellent energy efficiency and thermal performance. It is specifically designed to address the demanding requirements of high power density applications that also require minimal conduction losses.

With a voltage rating of 650 V, the STB19NM65N is well-suited for a wide range of applications, including switch-mode power supplies (SMPS), LED lighting, high-efficiency converters, and power management solutions. Its low on-resistance of just 0.19 Ω (typical) ensures that power losses are kept to a minimum, enhancing overall system efficiency and reliability.

The STB19NM65N boasts a continuous current rating of 17 A, making it capable of handling significant power without compromise. Its robust design is encapsulated in the compact yet durable D²PAK package, which not only saves space on the PCB but also enables excellent heat dissipation. This characteristic is particularly important in applications where thermal management is critical to maintain performance and extend product lifespan.

Other notable features of the STB19NM65N include its fast switching performance, which is essential for reducing switching losses in high-frequency operations. The device also incorporates STMicroelectronics' proprietary Zener-protection, which provides enhanced ESD immunity and safeguards the MOSFET from voltage transients, thus ensuring a higher degree of reliability in harsh environments.

For designers and engineers looking to develop energy-efficient and compact power solutions, the STB19NM65N represents a superior choice. It combines STMicroelectronics' cutting-edge MDmesh™ DM2 technology with practical packaging, making it a versatile and reliable component for a plethora of power applications.

Overall, the STB19NM65N is a testament to STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry. Its performance, efficiency, and reliability make it an ideal choice for anyone looking to enhance their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.5391 $58.8519
22+ $5.3656 $118.0432
34+ $5.1979 $176.7286
46+ $5.0302 $231.3892
60+ $4.8626 $291.7560
80+ $4.3594 $348.7520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,530 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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