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STB28N60DM2

Part No STB28N60DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 21A
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1500pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 10.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1010565-STB28N60DM2
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB28N60DM2 CAD Model

Description

STB28N60DM2 - High Performance N-Channel MOSFET

The STB28N60DM2 is a state-of-the-art N-channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader. This power MOSFET is designed to meet the demanding requirements of high-efficiency power conversion and switching applications.

Key Features

  • Advanced Technology: Utilizing STMicroelectronics' MDmesh™ DM2 technology, the STB28N60DM2 offers an optimal balance between on-resistance and gate charge, leading to high efficiency and superior switching performance.
  • High Voltage Capability: With a drain-source voltage of 600V, this MOSFET is suitable for a wide range of applications, including those that require high voltage operation.
  • Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)) of 0.165 Ω max, which minimizes conduction losses and improves overall efficiency.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) ensures reduced switching losses, making the STB28N60DM2 ideal for high-frequency applications.
  • High Current Capability: The MOSFET supports a continuous drain current of up to 23 A, accommodating substantial power handling and making it suitable for high-current applications.
  • Robust Package: Housed in a TO-220 package, the STB28N60DM2 is designed for robustness and thermal performance, ensuring reliability even in harsh conditions.

Applications

The STB28N60DM2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Motor Control
  • Power Factor Correction Circuits
  • Welding Equipment

Environmental and Quality Certifications

STMicroelectronics is committed to environmental stewardship and quality. The STB28N60DM2 is manufactured with these principles in mind, ensuring compliance with international standards and regulations.

Conclusion

With its advanced technology, high voltage and current capabilities, low on-resistance, and reduced gate charge, the STB28N60DM2 from STMicroelectronics is an excellent choice for designers looking to optimize their power conversion and switching systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.9436 $59.4360
24+ $4.8766 $117.0384
37+ $4.7243 $174.7991
51+ $4.5720 $233.1720
66+ $4.4195 $291.6870
88+ $3.9623 $348.6824
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 375 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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