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STB2N62K3

Part No STB2N62K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series SuperMESH3™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 50 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number STB2N
Other Names -497-12971-6,497-12971-6,497-12971-2,497-12971-1,-497-12971-2,-497-12971-1
Standard Package 1,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277980-STB2N62K3
Ultra Librarian 3D Model Ultra Librarian STB2N62K3 CAD Model

Description

STB2N62K3 - N-channel 620 V, 2.4 Ω typ., 2 A SuperMESH™3 Power MOSFET in D²PAK Package

The STB2N62K3 is a high performance N-channel Power MOSFET produced by STMicroelectronics, utilizing the company's advanced SuperMESH™3 technology. This MOSFET is designed to offer extremely high voltage capability (620 V), low on-resistance (2.4 Ω typical), and a continuous current rating of 2 A, making it an ideal choice for a wide range of power applications.

With its cutting-edge technology, the STB2N62K3 provides improved power handling capability and efficiency compared to traditional MOSFETs. The D²PAK package is designed to handle high thermal and electrical loads, ensuring reliability and performance in demanding situations.

Key Features

  • Ultra low gate charge (Qg)
  • Reduced threshold voltage (Vth)
  • 100% avalanche tested
  • Zener-protected
  • Very low intrinsic capacitances
  • Extremely high dv/dt capability

Applications

The STB2N62K3 is suitable for a variety of applications, such as:

  • Switching applications
  • Power supplies
  • Power factor correction circuits
  • Lighting
  • Motor control

Performance and Efficiency

STMicroelectronics' SuperMESH™3 technology equips the STB2N62K3 with exceptional switching performance and energy efficiency. The low gate charge and reduced threshold voltage allow for faster switching speeds and lower driving power, which translates into better overall efficiency in power conversion applications. Additionally, the robust design with 100% avalanche testing ensures safe operation under extreme conditions.

Reliability

With the built-in Zener diode, the STB2N62K3 is protected against voltage spikes, enhancing its reliability and longevity. The MOSFET's very low intrinsic capacitances contribute to its excellent thermal characteristics, making it a reliable component for long-term use in electronic circuits.

For designers and engineers looking for a power MOSFET that combines high voltage capability with efficiency and reliability, the STB2N62K3 from STMicroelectronics represents an excellent choice.

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