The STB36NF03LT4 is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This device is designed to meet the stringent requirements of modern electronic circuits, offering a combination of low on-resistance and high switching speed, making it an ideal choice for a wide range of power management applications.
Key Features
- Low Threshold Drive: The device can be driven at low gate voltages, making it compatible with modern microcontrollers and logic-level devices.
- High Current Capability: With a continuous drain current of 30A, the STB36NF03LT4 can handle significant power, suitable for high-performance applications.
- Low On-Resistance (RDS(on)): The MOSFET features an exceptionally low on-resistance of just 0.036Ω, which translates to reduced power losses and improved efficiency.
- 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability under stress conditions.
- Application Versatility: Suitable for a broad range of applications including DC-DC converters, motor control, power management in computing and telecom systems, and more.
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
30V |
| Continuous Drain Current (ID) |
30A |
| Power Dissipation (PD) |
80W |
| RDS(on) |
0.036Ω |
| Package |
D2PAK |
The STB36NF03LT4 is housed in a D2PAK package, known for its robustness and ability to handle high thermal and electrical loads. This packaging, combined with the device's inherent characteristics, ensures that it can operate reliably even in demanding situations.
Whether you are designing power supplies, optimizing power efficiency, or looking for a switch with fast turn-on and turn-off times, the STB36NF03LT4 from STMicroelectronics is a compelling option that promises performance and reliability.