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STB5N52K3

Part No STB5N52K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 4.4A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 545pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 140349-STB5N52K3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STB5N52K3 CAD Model

Description

STB5N52K3 - Power MOSFET by STMicroelectronics

The STB5N52K3 is a high-performance N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This device is a part of STMicroelectronics' MDmesh™ K3 series, which is known for its exceptional efficiency and thermal performance. It is an ideal choice for a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-AC converters, and motor control systems.

Key Features

  • Low On-Resistance (R<sub>DS(on)): The STB5N52K3 boasts an extremely low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Voltage Rating: With a drain-source voltage (V<sub>DS) of 525V, this MOSFET can handle high voltage applications with ease, ensuring reliability and robustness in demanding environments.
  • Fast Switching Performance: The device is designed for fast switching, which is critical in reducing switching losses and improving the performance of power conversion systems.
  • Enhanced Body Diode: The MOSFET features a ruggedized body diode that can withstand high pulse currents, making it suitable for hard-switching applications.

Advanced Technology

STMicroelectronics' innovative MDmesh™ K3 technology is at the core of the STB5N52K3. This technology integrates a vertical structure that enhances the device's capability to handle high currents and voltages without compromising on performance. The result is a MOSFET that not only performs efficiently but also maintains stability over a wide range of operating conditions.

Applications

The versatility of the STB5N52K3 allows it to be used in various high-efficiency applications, including:

  • LED lighting solutions
  • High-performance computing and server power supplies
  • Telecom and networking power systems
  • Industrial power supplies and welders
  • Solar inverters and renewable energy systems

Package Information

The STB5N52K3 comes in a D2PAK package, which is known for its compact form factor and excellent thermal characteristics. This package is suitable for surface-mount technology (SMT) and is designed to provide optimal heat dissipation, ensuring long-term reliability and performance.

With its combination of high efficiency, robust design, and advanced MDmesh™ K3 technology, the STB5N52K3 from STMicroelectronics is a top-tier component for power management solutions seeking to achieve high performance with energy-saving benefits.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8177 $61.3275
175+ $0.6711 $117.4425
270+ $0.6500 $175.5000
370+ $0.6292 $232.8040
475+ $0.6081 $288.8475
640+ $0.5452 $348.9280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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