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STB80NE03L-06T4

Part No STB80NE03L-06T4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 80A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series STripFET
Packaging Reel - TR
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 130nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 6500pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 150W (Tc)
Rds On (Maximum) @ Id, Vgs 6 mOhm @ 40A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Homepage www.st.com
Win Source Part Number 756915-STB80NE03L-06T4
Popularity Medium
Supply and Demand Status Balance
Family Name STB80NE03L-06
Introduction Date July 31, 1998
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STB80NE03L-06T4 CAD Model

Description

STB80NE03L-06T4 - STMicroelectronics N-Channel MOSFET

The STB80NE03L-06T4 is a high-performance N-Channel MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This MOSFET is specifically designed to deliver efficiency and power handling capabilities to a wide range of applications, including switching regulators, switching converters, motor drivers, and relay drivers.

Key Features:

  • Low On-Resistance: The STB80NE03L-06T4 boasts an exceptionally low on-resistance (R<sub>DS(on)) of just 0.0065Ω, which enhances its efficiency and reduces power losses during operation.
  • High Current Capability: With a continuous drain current (I<sub>D) of 80A, this MOSFET can handle high current applications with ease, making it suitable for demanding power management tasks.
  • High Voltage Threshold: The device can sustain a drain-source voltage (V<sub>DS) up to 30V, providing a good safety margin for a variety of electronic circuits.
  • Logic Level Gate Drive: It can be driven at logic level voltages, which means it can be directly controlled by microcontrollers or logic circuits without the need for additional drivers.
  • Low Gate Charge: The low gate charge (Q<sub>g) allows for faster switching speeds, which is crucial for high-frequency applications.

Applications:

The STB80NE03L-06T4 is versatile and can be utilized in a multitude of applications. Some of the common use cases include:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Control Systems
  • Automotive Applications
  • High-Efficiency Switching Applications

Package and Quality:

The STB80NE03L-06T4 comes in a surface-mount D2PAK package, which is known for its durability and thermal performance. STMicroelectronics is committed to high standards of quality, and this MOSFET is no exception, meeting stringent reliability criteria for industrial and automotive-grade components.

Conclusion:

With its robust performance characteristics and versatility, the STB80NE03L-06T4 from STMicroelectronics is an excellent choice for designers looking to enhance the efficiency and reliability of their power management systems. Its compatibility with logic-level gate drives and high current handling capability make it a go-to component for a wide array of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.8768 $65.6880
80+ $1.5400 $123.2000
120+ $1.4918 $179.0160
160+ $1.4438 $231.0080
210+ $1.3956 $293.0760
280+ $1.2513 $350.3640
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,880 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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