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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 258nC @ 10V
Max Input Capacitance 5500pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1102814-STB80PF55T4
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian STB80PF55T4 CAD Model

Description

STB80PF55T4 - STMicroelectronics Power MOSFET

The STB80PF55T4 is a high-performance Power MOSFET brought to you by STMicroelectronics, a leading name in the semiconductor industry. This Power MOSFET is part of their STripFET™ IV series, which is renowned for providing low on-resistance and low gate charge, leading to superior switching performance and efficiency.

Designed to handle a continuous drain current of up to 80A with a low threshold voltage, the STB80PF55T4 is a go-to component for applications requiring high power density and energy efficiency. Its maximum drain-source voltage (V<sub>DS) is rated at 55V, making it suitable for a wide range of applications, from power supplies to motor control circuits.

The device is encapsulated in a D2PAK package, which is known for its robustness and excellent thermal performance. This package ensures that the MOSFET can handle high current and power levels without compromising on reliability or longevity. The STB80PF55T4 is optimized for use in both hard-switching and soft-switching circuits, providing designers with the flexibility to use it in various high-efficiency power conversion topologies.

Key features of the STB80PF55T4 include:

  • Low on-resistance (R<sub>DS(on)): This characteristic minimizes conduction losses and improves overall efficiency, making it ideal for high-performance power management applications.
  • Low gate charge (Q<sub>g): The reduced gate charge enables faster switching speeds and reduces switching losses, further enhancing the energy efficiency of the end application.
  • 100% avalanche tested: Each unit is rigorously tested for reliability in conditions that simulate real-world applications, ensuring robust performance and long-term durability.

The STB80PF55T4's combination of low on-state resistance, high current capacity, and efficient switching characteristics make it an excellent choice for designers looking to optimize their power management systems. Whether it's for automotive applications, DC-DC converters, or high-efficiency power supplies, the STB80PF55T4 from STMicroelectronics offers a high-quality solution that engineers can rely on.

For detailed specifications, application notes, and additional resources, visit the STMicroelectronics website to ensure your design incorporates the best in power MOSFET technology.

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