STMicroelectronics STD110N8F6 - N-channel MOSFET

The STD110N8F6 is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver efficiency and power for a wide range of applications. This MOSFET is part of STMicroelectronics' STripFET™ VI DeepGATE™ technology, ensuring optimized on-state resistance and superior switching performance.

Key Features:

• Low On-Resistance: The STD110N8F6 boasts an exceptionally low on-resistance (R<sub>DS(on)) of only 8 mΩ at V<sub>GS = 10 V, which enhances its conduction efficiency and reduces power losses during operation.
• High Current Capability: With a continuous drain current (I<sub>D) of 80 A, this MOSFET can handle high current applications, making it suitable for power-intensive tasks.
• Enhanced Switching Performance: Its fast switching characteristics are ideal for applications requiring high-speed operation, contributing to improved overall performance and energy savings.
• 100% Avalanche Tested: Each device is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.
• Low Gate Charge: The device features a low gate charge (Q<sub>g), which reduces the power required to drive the MOSFET, contributing to energy efficiency in the system.

Applications:

The STD110N8F6 is versatile and can be used in a variety of applications, including:

• Power supply units
• DC-DC converters
• Motors control
• Automotive applications
• Switching applications

Package and Environmental Compliance:

The STD110N8F6 is available in a TO-252 (DPAK) package, which is widely used and suitable for compact designs. It also complies with RoHS and Halogen-free requirements, ensuring environmental sustainability and meeting global regulatory standards.

Overall, the STD110N8F6 N-channel MOSFET by STMicroelectronics represents a blend of efficiency, reliability, and performance, suitable for designers and engineers looking to optimize their power management solutions.