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STD11NM50N

Part No STD11NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 9A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 19nC @ 10V
Max Input Capacitance 547pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 70W (Tc)
Maximum Rds On at Id,Vgs 470 mOhm @ 4.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031109-STD11NM50N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STD11NM50N CAD Model

Description

STMicroelectronics STD11NM50N N-channel MOSFET

The STD11NM50N is a high-performance N-channel MOSFET from STMicroelectronics, designed to deliver efficiency and power management in a wide range of applications. This power MOSFET is a part of ST's MDmesh™ II Plus low Qg series, which is renowned for its low gate charge and reduced on-resistance, making it an ideal choice for high-efficiency solutions.

Key Features

  • Low threshold drive: The device features a low threshold voltage, which ensures that it can be driven by low-voltage control signals, making it suitable for logic-level gate drive circuits.
  • High voltage capability: With a drain-source voltage (V<sub>DS) of 500V, the STD11NM50N can handle high voltage applications, providing a wide safety margin for electrical equipment.
  • Reduced on-resistance: The MOSFET boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency.
  • High current handling: With a continuous drain current (I<sub>D) of up to 11A, this device is capable of handling significant current, making it suitable for power-intensive applications.
  • Improved power density: Its TO-252 (DPAK) package is designed for compact installation, allowing for better power density in space-constrained applications.

Applications

The STD11NM50N is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED lighting systems
  • High-efficiency DC-DC converters
  • Motor control circuits
  • Power management solutions

Reliability and Performance

STMicroelectronics is committed to delivering products that meet the highest standards of reliability and performance. The STD11NM50N is no exception, with its robust design and manufacturing process that ensures long-term reliability for critical applications. Its ability to operate at high temperatures, combined with a ruggedized package, makes it a dependable choice for industrial and commercial power systems.

In summary, the STD11NM50N from STMicroelectronics is a high-efficiency, high-performance N-channel MOSFET that offers designers a great balance of power handling, efficiency, and compactness, suitable for a broad range of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3611 $61.2495
105+ $1.1168 $117.2640
165+ $1.0819 $178.5135
225+ $1.0470 $235.5750
290+ $1.0122 $293.5380
385+ $0.9074 $349.3490
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,724 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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