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STD1HN60K3

Part No STD1HN60K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 9.5nC @ 10V
Max Input Capacitance 140pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 27W (Tc)
Maximum Rds On at Id,Vgs 8 Ohm @ 600mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102859-STD1HN60K3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD1HN60K3 CAD Model

Description

The STD1HN60K3 is a high-performance N-channel Power MOSFET from STMicroelectronics. It is designed to deliver the efficiency and speed needed for a wide range of power management applications. This MOSFET is part of STMicroelectronics' STripFET™ III technology, which optimizes on-resistance and switching performance, providing an excellent figure of merit (FOM).

Key Features

  • Low Threshold Drive: The device features a low gate threshold voltage, making it suitable for low voltage drive applications.
  • High Switching Speed: With fast switching capabilities, the STD1HN60K3 is ideal for high-frequency circuits, reducing switching losses and improving efficiency.
  • Low On-Resistance (R<sub>DS(on)): The low on-state resistance ensures minimal power loss during conduction, contributing to overall energy savings.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, enhancing reliability and durability in harsh conditions.
  • Enhanced Thermal Performance: The package design provides excellent thermal performance, ensuring stability and longevity even under high temperature operation.

Applications

The versatility of the STD1HN60K3 makes it suitable for a broad range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • LED Lighting Solutions
  • Power Management Functions

Product Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 600V Continuous Drain Current (I<sub>D) 1A Power Dissipation (P<sub>D) 30W Operating Temperature Range -55°C to 150°C

With its robust design and superior performance metrics, the STD1HN60K3 MOSFET is a reliable choice for designers seeking to optimize their power management systems for efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1718 $52.7310
95+ $1.0962 $104.1390
145+ $1.0584 $153.4680
205+ $0.9828 $201.4740
265+ $0.9450 $250.4250
335+ $0.9072 $303.9120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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