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STD2N62K3

Part No STD2N62K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 620V 2.2A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 620V
Continuous Drain Current at 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 340pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 3.6 Ohm @ 1.1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1102871-STD2N62K3
Family Name STD2N62K3
Introduction Date May 31, 2011
ECCN EAR99
Country of Origin United States of America
Halogen Free Compliant
Estimated EOL Date 2029
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD2N62K3 CAD Model

Description

Overview of STD2N62K3 MOSFET

The STD2N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This device is part of ST's STripFET™ III technology, which ensures an optimal trade-off between on-state resistance (RDS(on)) and gate charge (Qg), enhancing the overall system efficiency.

Key Features

  • Device Type: N-channel MOSFET
  • Technology: STripFET™ III
  • Drain-Source Voltage (VDSS): 620V
  • Continuous Drain Current (ID): 3.7A
  • On-State Resistance (RDS(on)): Typically 0.65 Ω at VGS = 10V
  • Gate Charge (Qg): Low
  • Package: DPAK

Applications

The STD2N62K3 is designed for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • DC-DC Converters
  • Power Management Functions
  • High Efficiency Switching for Power Circuits

Performance and Efficiency

With its 620V breakdown voltage, the STD2N62K3 is suitable for high-voltage applications, ensuring robustness and reliability. The low on-state resistance minimizes conduction losses, while the low gate charge enhances switching performance, making the device ideal for high-efficiency power management systems.

Thermal and Mechanical Data

  • Operating Junction Temperature Range: -55°C to 150°C
  • Thermal Resistance, Junction-to-Ambient: Max 62.5 °C/W
  • Thermal Resistance, Junction-to-Case: Max 3.1 °C/W
  • Lead-free device, compliant with RoHS and Halogen-free directives

Quality and Reliability

STMicroelectronics is committed to providing high-quality products. The STD2N62K3 MOSFET is manufactured with robust and reliable processes, ensuring that it meets the stringent requirements of industrial and consumer electronic products. It is designed to withstand harsh environments and provide stable performance over its entire operating range.

Conclusion

The STD2N62K3 from STMicroelectronics is a testament to the company's dedication to innovation and excellence in power semiconductor technology. Its superior electrical characteristics make it an excellent choice for designers looking to enhance power efficiency and reliability in their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6744 $60.6960
210+ $0.5534 $116.2140
325+ $0.5362 $174.2650
450+ $0.5188 $233.4600
580+ $0.5015 $290.8700
775+ $0.4497 $348.5175
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,150 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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