Overview of STD2N62K3 MOSFET
The STD2N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed to deliver efficiency and reliability for a wide range of applications. This device is part of ST's STripFET™ III technology, which ensures an optimal trade-off between on-state resistance (R<sub>DS(on)) and gate charge (Q<sub>g), enhancing the overall system efficiency.
Key Features
- Device Type: N-channel MOSFET
- Technology: STripFET™ III
- Drain-Source Voltage (V<sub>DSS): 620V
- Continuous Drain Current (I<sub>D): 3.7A
- On-State Resistance (R<sub>DS(on)): Typically 0.65 Ω at V<sub>GS = 10V
- Gate Charge (Q<sub>g): Low
- Package: DPAK
Applications
The STD2N62K3 is designed for a variety of applications, including:
- Switch Mode Power Supplies (SMPS)
- LED Lighting
- DC-DC Converters
- Power Management Functions
- High Efficiency Switching for Power Circuits
Performance and Efficiency
With its 620V breakdown voltage, the STD2N62K3 is suitable for high-voltage applications, ensuring robustness and reliability. The low on-state resistance minimizes conduction losses, while the low gate charge enhances switching performance, making the device ideal for high-efficiency power management systems.
Thermal and Mechanical Data
- Operating Junction Temperature Range: -55°C to 150°C
- Thermal Resistance, Junction-to-Ambient: Max 62.5 °C/W
- Thermal Resistance, Junction-to-Case: Max 3.1 °C/W
- Lead-free device, compliant with RoHS and Halogen-free directives
Quality and Reliability
STMicroelectronics is committed to providing high-quality products. The STD2N62K3 MOSFET is manufactured with robust and reliable processes, ensuring that it meets the stringent requirements of industrial and consumer electronic products. It is designed to withstand harsh environments and provide stable performance over its entire operating range.
Conclusion
The STD2N62K3 from STMicroelectronics is a testament to the company's dedication to innovation and excellence in power semiconductor technology. Its superior electrical characteristics make it an excellent choice for designers looking to enhance power efficiency and reliability in their electronic designs.
