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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 27nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 109790-STD5N20T4
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STD5N20
Introduction Date March 29, 1999
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian STD5N20T4 CAD Model

Description

STMicroelectronics STD5N20T4 - N-Channel 200V - 4A MOSFET

The STD5N20T4 is a high-performance, N-channel Power MOSFET brought to you by STMicroelectronics, a leader in semiconductor solutions. Designed to operate at a drain-source voltage of 200V, this MOSFET is capable of delivering a continuous drain current of up to 4A, making it an ideal choice for a wide range of power applications.

Constructed with STMicroelectronics' innovative MDmesh™ technology, the STD5N20T4 offers an extremely low on-resistance (R<sub>DS(on)), which significantly enhances its efficiency in power conversion applications. This technology also provides the benefit of reduced gate charge (Q<sub>g), which translates to improved switching performance and faster response times in high-frequency circuits.

The device is housed in a compact DPAK package, which not only saves space on the PCB but also ensures a high level of thermal performance, allowing the MOSFET to operate reliably even under high power and temperature conditions. The package is designed to be compatible with automated assembly processes, ensuring ease of integration into various electronic systems.

Key features of the STD5N20T4 include:

  • 200V Drain-source Voltage (V<sub>DS)
  • 4A Continuous Drain Current (I<sub>D)
  • Low Threshold Voltage (V<sub>GS(th))
  • Low Input Capacitance (C<sub>iss)
  • Fast Switching Speed
  • 100% Avalanche Tested

This MOSFET is suitable for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control
  • LED Lighting
  • Automotive applications
  • High-efficiency power management systems

Overall, the STD5N20T4 from STMicroelectronics represents a reliable and efficient solution for designers looking to enhance the performance of their power management systems. Its robust design and advanced technology make it a versatile component for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9163 $59.5595
150+ $0.7519 $112.7850
235+ $0.7283 $171.1505
320+ $0.7049 $225.5680
415+ $0.6814 $282.7810
555+ $0.6108 $338.9940
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 3,000 pieces
MOQ: 65 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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