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STF4N52K3

Part No STF4N52K3
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 525V 2.5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 525V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 334pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 2.6 Ohm @ 1.25A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1102964-STF4N52K3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STF4N52K3 CAD Model

Description

STF4N52K3 - N-channel 525 V, 3.8 Ω typ., 4 A SuperMESH™3 Power MOSFET in a TO-220FP package

The STF4N52K3 is a high voltage MOSFET designed to offer the best in class performance for efficiency and reliability in a wide range of applications. Manufactured by STMicroelectronics, a global semiconductor leader, this MOSFET is part of their SuperMESH™3 family, which is renowned for its extremely low on-resistance and high dv/dt capability.

This power MOSFET is housed in a TO-220FP package, which is well-suited for through-hole mounting, providing a robust and reliable mechanical and electrical connection. The device is capable of handling continuous currents up to 4 A, making it an excellent choice for power supply units, lighting applications, and high-performance converters.

The STF4N52K3 boasts a breakdown voltage of 525 V, which ensures a wide safety margin in high-voltage applications. It also features a very low typical on-resistance of 3.8 Ω, which translates to reduced conduction losses and improved overall efficiency. This is particularly beneficial in applications where energy efficiency is paramount, such as in green energy solutions and power management systems.

Furthermore, the SuperMESH™3 technology integrates a fast recovery diode, which minimizes switching losses and reduces the stress on the device during high-speed switching operations. This makes the STF4N52K3 ideal for high-frequency circuits and applications where switching efficiency is critical.

The device also incorporates Zener-protection that enhances its robustness against electrostatic discharges, ensuring a longer operational life and reliability in adverse conditions. Its 100% avalanche tested design guarantees safe operation under extreme conditions, making it suitable for rugged industrial applications.

In summary, the STF4N52K3 from STMicroelectronics is a powerful and reliable N-channel MOSFET that offers exceptional performance in a wide range of high-voltage and high-efficiency applications. Its advanced features and robust package design make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.9131 $59.3515
155+ $0.7493 $116.1415
240+ $0.7260 $174.2400
330+ $0.7025 $231.8250
430+ $0.6791 $292.0130
570+ $0.6088 $347.0160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,500 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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