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STGW35NC60WD

Part No STGW35NC60WD
Manufacturer STMicroelectronics
Catalog IGBTs - Single
Description IGBT 600V 70A 260W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 70A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 2.6V @ 15V, 20A
Maximum Power Dissipation 260W
Total Switching Energy(Ets) 305μJ (on), 181μJ (off)
Input Type Standard
Gate Charge 102nC
Turn-on and Turn-off delay time 29.5ns/118ns
Testing Conditions 390V, 20A, 10 Ohm, 15V
Reverse Recovery Time (trr) 40ns
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 1103056-STGW35NC60WD
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control
Ultra Librarian 3D Model Ultra Librarian STGW35NC60WD CAD Model

Description

STGW35NC60WD - IGBT from STMicroelectronics

The STGW35NC60WD is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This IGBT is designed to meet the demands of a wide range of high power switching applications. It combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.

The device boasts a robust and cost-effective Field Stop Trench technology, which provides a superior performance in terms of switching speed and energy efficiency. The STGW35NC60WD is capable of operating at a high voltage of up to 600V, making it suitable for applications that require efficient power conversion and control, such as motor drives, uninterruptible power supplies (UPS), inverter systems, and general-purpose inverters.

Key Features:
  • Maximum Collector-Emitter Voltage (V<sub>CE): 600V
  • Collector Current (I<sub>C): 35A
  • Low saturation voltage (V<sub>CE(sat))
  • High-speed switching
  • Low gate charge and input capacitance
  • Co-packaged with a soft and fast recovery anti-parallel diode

The device is also characterized by a low on-voltage drop (V<sub>CE(sat)) which minimizes conduction losses and improves overall system efficiency. The fast switching speed of the STGW35NC60WD reduces switching losses, making it an excellent choice for high-frequency operations.

In addition to its electrical performance, the STGW35NC60WD is housed in a TO-247 long leads package, which provides excellent thermal performance and is suitable for high-power applications. The package is designed to handle high levels of thermal and mechanical stress, ensuring reliability and longevity in harsh environments.

For designers and engineers, the STGW35NC60WD offers an optimized solution that balances performance, efficiency, and cost. Its ease of integration into various circuit designs, combined with STMicroelectronics' reputation for quality and support, makes this IGBT a go-to component for those looking to enhance their power management systems.

For detailed specifications and application notes, customers are encouraged to consult the datasheet and technical documentation available on the STMicroelectronics website.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $24.0633 $72.1899
6+ $19.7447 $118.4682
10+ $19.1268 $191.2680
13+ $18.5100 $240.6300
17+ $17.8933 $304.1861
22+ $16.0418 $352.9196
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Availability: 7,670 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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